COMPARISON OF ELECTRON IRRADIATION ON THE FORMATION OF SURFACE DEFECTS IN SITU AND POST THIN-FILM LiF/Si(111) DEPOSITION

COMPARISON OF ELECTRON IRRADIATION ON THE FORMATION OF SURFACE DEFECTS IN SITU AND POST THIN-FILM LiF/Si(111) DEPOSITION

 

U.B. Sharopov, K. Kaur, M.K. Kurbanov, D.Sh. Saidov, Sh. R. Nurmatov, M.M. Sharipov, B.E. Egamberdiev

Thin Solid Films, 2021, V.735  https://doi.org/10.1016/j.tsf.2021.138902

 

a. Physical-Technical Institute, Uzbekistan Academy of Sciences, 100084, Tashkent, Uzbekistan

b. Punjab Engineering College (Deemed to be University), 160012, Chandigarh, India

c. Urgench State University, 220100, Urgench, Uzbekistan

d. Urgench Branch of Tashkent University of Information Technologies, 220100, Urgench, Uzbekistan

e. Institute of Materials Science, Uzbekistan Academy of Sciences, 100084, Tashkent, Uzbekistan

f. Technical University of Tashkent, 100095, Tashkent, Uzbekistan

Abstract:

 

A comparative study of the formation of defects on the surface of growing and formed lithium fluoride films under irradiation with low-energy electrons by total current spectroscopy has been carried out. It is shown that, in the post case, the aggregation of F2+-, F2-, F3-, and X-centres proceeds by coalescence of F-centres. In situ process, due to the renewal of the surface with a new layer, large defects are not observed, but a high concentration of laser color centers is formed. Electron irradiation and negative potential treatment during film growth can be used as a technology for producing epitaxial films with the (111) orientation.

 

Keywords: Total current spectroscopy; Lithium fluoride; Thin films; Electron irradiation; Defect formation; Surface; Laser colour centres; Negative potential