Controlling the Low-temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

Controlling the Low-temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

Utkir Bahodirovich Sharopov  &  Kulwinder Kaur  &  Muzaffar Kadambaevich Kurbanov  &

Dilmurod Shamurodovich Saidov  &  Erkin Turobovich Juraev  & Mirkomil Mirvalievich Sharipov

Silicon (2021)  https://doi.org/10.1007/s12633-021-01268-0  

Received: 7 May 2021 / Accepted: 7 July 2021

# Springer Nature B.V. 2021

Abstract

A comparative study is carried out for etching a surface with negative and positive ions, and the results show completely opposite physical processes occur on a silicon surface. Irradiation with positive ions exhibits oxide removal, while irradiation with negative ions shows an intense oxidation of the sample surface. Technology for low-temperature ion cleaning and the electron-spectrometric control of silicon wafers has been developed. This technology has been shown that only irradiation with caesium ions followed by annealing at 650 °C leads to an atomically clean silicon surface for several minutes, which is dependent on the pressure of residual gases under vacuum. After cleaning in a vacuum of 10 9 Pa, the silicon surface begins to oxidize again within 10 min.

Keywords  Silicon . Ion irradiation . Etching . Annealing . Cleaning . Surface . Oxygen

1     “Solar Thermal and Power Plants” Laboratory, Physical-Technical Institute, Uzbekistan Academy of Sciences, Chingiz Aitmatov St., 2, 100084 Tashkent, Uzbekistan

2     Department of Applied Sciences, PEC University of Technology, Chandigarh 160012, India

3     Urgench State University, 220100 Urgench, Uzbekistan

4     Urgench Branch of Tashkent University of Information Technologies, 220100 Urgench, Uzbekistan